Shallow defect states in GaAs responsible for GaAs bandgap upconversion induced by electron beam during MBE growth

Tex, David M.; Kamiya, Itaru

doi:doi:10.1116/1.3679547

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Journal of Vacuum Science & Technology B / Volume 30 / Issue 2 / 28th North American Molecular Beam Epitaxy Conference

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J. Vac. Sci. Technol. B 30, 02B120 (2012); http://dx.doi.org/10.1116/1.3679547 (4 pages)

Shallow defect states in GaAs responsible for GaAs bandgap upconversion induced by electron beam during MBE growth

David M. Tex and Itaru Kamiya

Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan

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(Published online 1 February 2012)

Abstract

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Upconversion through excitation of bulk GaAs is investigated by change in crystal growth conditions with electron beam (e-beam). The upconverted photoluminescence intensity is enhanced several times by striking the source fluxes with e-beam during molecular beam epitaxy (MBE) growth. Experimental evidence for a shallow intermediate state being responsible for this upconversion is presented. It is suggested that the intermediate state may be formed by shallow exciton trap states induced by As anti-site defects, which can be increased with e-beam during MBE growth.

ACKNOWLEDGMENTS

This work was supported by the Strategic Research Infrastructure Project, the Ministry of Education, Sports, Science and Technology, Japan.

Article Outline

INTRODUCTION
EXPERIMENT
RESULTS AND DISCUSSION
CONCLUSION

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KEYWORDS and PACS

Keywords

crystal growth, defect states, electron beam effects, energy gap, excitons, gallium arsenide, III-V semiconductors, molecular beam epitaxial growth, photoluminescence

PACS

71.55.Eq

III-V semiconductors
78.55.Cr

III-V semiconductors
81.05.Ea

III-V semiconductors
81.15.Hi

Molecular, atomic, ion, and chemical beam epitaxy
61.80.Fe

Electron and positron radiation effects
71.20.Ps

Other inorganic compounds

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History

Received 18 September 2011
Accepted 7 January 2012
Published online 1 February 2012

Digital Object Identifier

http://dx.doi.org/10.1116/1.3679547

PUBLICATION DATA

ISSN

1071-1023 (print)

1520-8567 (online)

Publisher

American Vacuum Society

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