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Journal of Vacuum Science & Technology B / Volume 30 / Issue 2 / 28th North American Molecular Beam Epitaxy Conference

J. Vac. Sci. Technol. B 30, 02B121 (2012); http://dx.doi.org/10.1116/1.3680603 (5 pages)

Growth of GaNxAsyP1−x−y alloys on GaP(100) by gas-source molecular beam epitaxy

Yan-Jin Kuang (邝彦瑾)1, San-Wen Chen (陳尚文)1, Hua Li (李华)2, Sunil K. Sinha1, and Charles Wuching Tu2

1Department of Physics, University of California, San Diego, La Jolla, California 92093
2Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093

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(Published online 8 February 2012)

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The authors report epitaxial growth of dilute nitride GaNxAsyP1−x−y on GaP(100) via a linearly graded GaAsxP1−x metamorphic buffer. The As content is in situ determined by group-V-induced reflection high energy electron diffraction intensity oscillation, while the N content is determined by x-ray diffraction. Room-temperature photoluminescence (PL) is observed for the top GaNxAsyP1−x−y layer and in temperature dependent PL, the peak position shows S-shape curve, indicative of defect states in the bandgap. Room-temperature PL intensity is drastically increased after rapid thermal annealing (RTA) and the results suggest GaNxAsyP1−x−y with different N content requires different optimal RTA temperature for optical performance.

© 2012 American Vacuum Society

ACKNOWLEDGMENTS

This work was partially supported by the National Science Foundation under Grant No. DMR-0907652 and by the Defense Advanced Research Projects Agency (DARPA) under the Nanoscale Architecture for Coherent Hyperoptical Sources (NACHOS) program.

Article Outline

  1. INTRODUCTION
  2. EXPERIMENT
  3. RESULTS AND DISCUSSION
  4. SUMMARY AND CONCLUSIONS

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KEYWORDS and PACS

Keywords

defect states, gallium arsenide, III-V semiconductors, molecular beam epitaxial growth, photoluminescence, rapid thermal annealing, reflection high energy electron diffraction, semiconductor growth, wide band gap semiconductors, X-ray diffraction

PACS

  • 81.15.Hi

    Molecular, atomic, ion, and chemical beam epitaxy

  • 78.66.Fd

    III-V semiconductors

  • 78.55.Cr

    III-V semiconductors

  • 71.55.Eq

    III-V semiconductors

  • 61.72.Cc

    Kinetics of defect formation and annealing

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History
Received 28 September 2011
Accepted 9 January 2012
Published online 8 February 2012
Digital Object Identifier
http://dx.doi.org/10.1116/1.3680603

PUBLICATION DATA

ISSN

1071-1023 (print)  
1520-8567 (online)

Publisher

American Vacuum Society

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