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Jul 2012

Volume 30, Issue 4, Articles (04xxxx)

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J. Vac. Sci. Technol. B 30, 041805 (2012); http://dx.doi.org/10.1116/1.4731255 (7 pages)

Meena S. Rajachidambaram, Tamas Varga, Libor Kovarik, Rahul Sanghavi, Vaithiyalingam Shutthanandan, Suntharampillai Thevuthasan, Seung-Yeol Han, Chih-Hung Chang, and Gregory S. Herman
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Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors [J. Vac. Sci. Technol. B 30, 041206 (2012)]

Chien-Fong Lo, Lu Liu, Fan Ren, Stephen J. Pearton, Brent P. Gila, Hong-Yeol Kim, Jihyun Kim, Oleg Laboutin, Yu Cao, Jerry W. Johnson, and Ivan I. Kravchenko

J. Vac. Sci. Technol. B 30, 043401 (2012); http://dx.doi.org/10.1116/1.4737150 (1 page)

Online Publication Date: 17 July 2012

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Abstract Unavailable
Show PACS
85.30.Tv Field effect devices
61.80.Jh Ion radiation effects
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