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May 2013

Volume 31, Issue 3 (partial)

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Insight into the multicomponent nature of negative bias temperature instability

Duc D. Nguyen, Camron Kouhestani, Kenneth E. Kambour, and Roderick A. B. Devine

J. Vac. Sci. Technol. B 31, 030601 (2013); http://dx.doi.org/10.1116/1.4796115 (4 pages)

Online Publication Date: 22 March 2013

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A novel measurement technique is used to extract two physically distinct “permanent” (long lived on our experimental time scale, ≤12 000 s) and one recoverable charge components of the negative bias temperature instability in p-channel metal–oxide–semiconductor field effect transistors under inversion and n-channel devices under accumulation. The results suggest that the permanent components are present in both cases, while there is little, if any, recoverable charge present in the case of the n-channel device. A physical explanation is provided involving the band energy diagram to explain these observations.
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85.30.Tv Field effect devices

Enhanced response to molecular adsorption of structurally defective graphene

Kanghyun Kim, Haeyong Kang, Cho Yeon Lee, and Wan Soo Yun

J. Vac. Sci. Technol. B 31, 030602 (2013); http://dx.doi.org/10.1116/1.4798649 (5 pages)

Online Publication Date: 5 April 2013

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This study shows that a minimal introduction of structural defects to graphene can greatly enhance its sensitivity to molecular gas adsorption. The electrical conductance of graphene is enhanced by several orders of magnitude after defect generation by exposure to Ar plasma for just a few seconds. This enhancement in the response of the graphene is strongly dependent upon the extent of the defect site formation, reflecting the dominant effect of the defects on graphene's physicochemical sensitivity to molecular adsorption. Repeated cycles of the adsorption and desorption of gas molecules on the same graphene device are successfully demonstrated, implying the promise of the graphene device as a molecular sensing platform.
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68.43.Mn Adsorption kinetics
61.48.Gh Structure of graphene
73.61.Wp Fullerenes and related materials

Coexistence of weak ferromagnetism and polar lattice distortion in epitaxial NiTiO3 thin films of the LiNbO3-type structure

Tamas Varga, Timothy C. Droubay, Mark E. Bowden, Robert J. Colby, Sandeep Manandhar, Vaithiyalingam Shutthanandan, Dehong Hu, Bernd C. Kabius, Edoardo Apra, William A. Shelton, and Scott A. Chambers

J. Vac. Sci. Technol. B 31, 030603 (2013); http://dx.doi.org/10.1116/1.4801664 (5 pages)

Online Publication Date: 15 April 2013

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The authors report the magnetic and structural characteristics of epitaxial NiTiO3 films grown by pulsed laser deposition that are isostructural with acentric LiNbO3 (space group R3c). Optical second harmonic generation and magnetometry demonstrate lattice polarization at room temperature and weak ferromagnetism below 250 K, respectively. These results appear to be consistent with earlier predictions from first-principles calculations of the coexistence of ferroelectricity and weak ferromagnetism in a series of transition metal titanates crystallizing in the LiNbO3 structure. This acentric form of NiTiO3 is believed to be one of the rare examples of ferroelectrics exhibiting weak ferromagnetism generated by a Dzyaloshinskii–Moriya interaction.
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75.30.-m Intrinsic properties of magnetically ordered materials
77.55.Nv Multiferroic/magnetoelectric films
61.50.Ah Theory of crystal structure, crystal symmetry; calculations and modeling
81.15.Fg Pulsed laser ablation deposition
68.55.A- Nucleation and growth
75.70.Ak Magnetic properties of monolayers and thin films

New method for determining flat-band voltage in high mobility semiconductors

Roy Winter, Jaesoo Ahn, Paul C. McIntyre, and Moshe Eizenberg

J. Vac. Sci. Technol. B 31, 030604 (2013); http://dx.doi.org/10.1116/1.4802478 (4 pages)

Online Publication Date: 18 April 2013

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The method that is commonly used for determining the flat-band voltage (VFB) and the flat-band capacitance (CFB) of metal oxide semiconductor (MOS) capacitors depends on many parameters and can only be used in the case of low interface trap density (Dit) when the capacitance–voltage measurements are carried out at high frequencies. This paper demonstrates a new and simple method for determining VFB and CFB. The method is based on the point of inflection in the capacitance–voltage curve. This method does not require the knowledge of material or experimental parameters and can be used on high Dit and high border trap density MOS structures at all frequencies.
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84.32.Tt Capacitors

Improvement of zirconium-doped hafnium oxide high-k dielectric properties by adding molybdenum

Chi-Chou Lin and Yue Kuo

J. Vac. Sci. Technol. B 31, 030605 (2013); http://dx.doi.org/10.1116/1.4802778 (5 pages)

Online Publication Date: 23 April 2013

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Dielectric properties of the Zr-doped hafnium oxide high-k thin film were improved with the addition of a small amount of molybdenum. The addition of molybdenum reduced the interface density of states and the oxide charge trapping density due to the removal of some oxygen vacancies and Hf dangling bonds in the film. It also decreased the leakage current and increased the breakdown voltage because of the increase of the total film thickness. The barrier height between the gate electrode and the high-k film was lowered as a result of the formation of a dipole layer at the interface. Therefore, the addition of a small amount of metal is an effective method to improve the dielectric properties of the high-k film.
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77.55.D- High-permittivity gate dielectric films
77.22.Jp Dielectric breakdown and space-charge effects
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