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May 2013

Volume 31, Issue 3, Articles (03xxxx)

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J. Vac. Sci. Technol. B 31, 03C110 (2013); http://dx.doi.org/10.1116/1.4793476 (4 pages)

Supanee Sukrittanon, YanJin Kuang (邝彦瑾), and Charles W. Tu
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Influence of barrier form on Fowler–Nordheim plot analysis

Andreas Fischer, Marwan S. Mousa, and Richard G. Forbes

J. Vac. Sci. Technol. B 31, 032201 (2013); http://dx.doi.org/10.1116/1.4795822 (9 pages)

Online Publication Date: 22 March 2013

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Recent research has described an improved method of Fowler–Nordheim (FN) plot analysis, based on the definition and evaluation of a slope correction factor and a new form of intercept correction factor. In this improved approach, there exists a basic approximation that neglects certain terms in the general theory, and focuses on the influence of the form of the tunneling barrier on the values of basic slope (σB) and intercept (ρB) correction factors. Simple formulae exist that allow these to be evaluated numerically for a barrier of arbitrary well-behaved form. This paper makes an initial exploration of the effects of barrier form on FN plot analysis. For a planar emitter, two models for the correlation-and-exchange (C&E) potential energy (PE) are used. For the Schottky–Nordheim barrier, it is shown that numerical and analytical approaches generate equivalent results. This agreement supports the validity of the numerical methods used. Comparisons with results for the Cutler–Gibbons barrier show that small differences in the assumed C&E PE make little difference to values of σB and ρB. Schottky's planar image PE has then been used, in conjunction with the electrostatic PE variation associated with a spherical emitter model, to explore the influence of apex radius ra on correction-factor values, for values of ra ≥ 20 nm. Both σB and ρB increase significantly as ra decreases, especially ρB. At low values of barrier field F, σB depends approximately linearly on 1/F, with a slope that depends on ra. Suggestions are made for how the exploratory work described in this paper might be extended.
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79.70.+q Field emission, ionization, evaporation, and desorption
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Gk Tunneling

Study of hydrogen detection response time with Pt-gated diodes fabricated on AlGaN/GaN heterostructure

Yuyin Xi, Lu Liu, Ya-Hsi Hwang, Oluwadamilola Phillips, Fan Ren, Stephen J. Pearton, Jihyun Kim, Chien-Hsing Hsu, Chien-Fong Lo, and Jerry Wayne Johnson

J. Vac. Sci. Technol. B 31, 032202 (2013); http://dx.doi.org/10.1116/1.4798612 (5 pages)

Online Publication Date: 3 April 2013

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The hydrogen detection response time of Pt-gated diode sensors fabricated on AlGaN/GaN heterostructure as a function of the hydrogen concentration was investigated. A new method to extract the response time, taking the derivative of diode current, was proposed and shown to reduce the response time of detecting 1% hydrogen by about 60% as compared to the response time defined as the diode current reaching 90% of its total changes, t90. Hydrogen-sensing experiments were conducted at different temperatures, and an Arrhenius plot of the data determined an activation energy of 17.7 kJ/mole for the sensing process.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.30.Kk Junction diodes

Methane detection using Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes

Yuyin Xi, Lu Liu, Fan Ren, Stephen J. Pearton, Jihyun Kim, Amir Dabiran, and Peter P. Chow

J. Vac. Sci. Technol. B 31, 032203 (2013); http://dx.doi.org/10.1116/1.4803743 (5 pages)

Online Publication Date: 9 May 2013

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Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes were employed to detect methane. A detection sensitivity >100 was obtained for the diodes under reverse bias, and this was one order of magnitude higher than the sensitivity of the diodes operated under forward bias. A new method to extract the response time was demonstrated by taking the derivative of diode current, allowing a reduction in the sensor response time by 80%. Methane sensing experiments were conducted at different temperatures, and an Arrhenius plot of the data determined an activation energy of 57 kJ/mol for the sensing process.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.30.Tv Field effect devices
85.30.Hi Surface barrier, boundary, and point contact devices
85.30.Kk Junction diodes

Nickel nanoparticle size and density effects on non-volatile memory performance

Emanuele Verrelli, Giorgos Galanopoulos, Ilias Zouboulis, and Dimitris Tsoukalas

J. Vac. Sci. Technol. B 31, 032204 (2013); http://dx.doi.org/10.1116/1.4804407 (7 pages)

Online Publication Date: 13 May 2013

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In this work, the authors present non-volatile memory devices based on nickel nanoparticles deposited by a novel sputtering process at room temperature and demonstrate and discuss the effect of nanoparticle size and density upon optimum device performance. The devices use a mixed dielectric stack comprised of a silicon dioxide tunneling layer and a hafnium oxide layer formed at low temperature. This allows for fabrication of devices with a relatively small thermal budget and superior performance in terms of memory windows and operating voltages. At voltages as low as 8 V, the memory window of the devices is as large as 5 V. Charge retention measurements confirm the non-volatility of these devices for up to 10 years, and analysis of the leakage currents sheds light on the mechanisms involved that create these charge retention characteristics.
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84.30.Sk Pulse and digital circuits

Enhanced light output from light emitting diodes with two-dimensional cone-shape nanostructured surface

Benzhong Wang and Soo-Jin Chua

J. Vac. Sci. Technol. B 31, 032205 (2013); http://dx.doi.org/10.1116/1.4804406 (5 pages)

Online Publication Date: 15 May 2013

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A simple, inexpensive and high throughput approach for creating two-dimensional cone-shaped nanostructures is reported. A self-assembled array of polystyrene nanospheres is employed as the primary mask to fabricate such structures on AlGaInP red light emitting diodes, resulting in over two times increase of light output power. An orderly array of cones show higher intensity emitted in the forward direction than one that is randomly arranged.
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85.60.Jb Light-emitting devices

Effect of chemical bonding states in TaOx base layers on rectifying bipolar resistive switching characteristics

Jonggi Kim, In-Su Mok, Youngjae Kim, Kyumin Lee, Dae-Hong Ko, and Hyunchul Sohn

J. Vac. Sci. Technol. B 31, 032206 (2013); http://dx.doi.org/10.1116/1.4806766 (5 pages)

Online Publication Date: 15 May 2013

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In this study, the authors investigated the rectifying bipolar resistive switching characteristics of Pt/HfO2/TaOx/Pt heterostacks with respect to the chemical bonding states of the TaOx base layer and the physical properties of the insulator layer. The authors demonstrated that the migration of oxygen ions at the interface between the HfO2 insulator layer and the TaOx base layer produced the rectifying bipolar resistive switching, and the switching current could be controlled via the oxygen concentration in the TaOx layer. They also observed that the current at the high-resistance state decreased with increasing thickness of the HfO2 insulator layer. Rectifying bipolar resistive switching behavior was additionally demonstrated by using an Al2O3 layer as an insulator instead of HfO2.
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84.30.Sk Pulse and digital circuits
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