Planar magnetron cosputtering (PMC) is a production technique for deposition of refractory metal silicide films. Films produced using this technique consist of alternating layers of metal and silicon, which intermix during subsequent thermal processing to form homogeneous, low‐resistivity films. The resulting films have low‐resistivities (28, 48, and 52 μΩ cm, respectively, for WSix, TaSix, and MoSx), and have very good oxidation and dry etch properties. This paper describes the PMC process and discusses the important deposition parameters. Two parameters, substrate bias level and substrate carrier rotation speed, produce effects not usually encountered for single‐component sputtered films. The influence of these two variables on film stoichiometry, as‐deposited resistivity, oxygen content, and density are examined. Changes in bias and rotation speed are found to produce repeatable changes in stoichiometry, as‐deposited resistivity, and density but do not appear to effect oxygen content. As‐deposited resistivity increases monotonically with silicon content and is a useful production process monitor. Evidence is also presented which suggests that properly prepared films exhibit very rapid interdiffusion during thermal annealing, and that considerable atomic mixing occurs during the deposition process. This conjecture is supported by the results of rapid optical anneals, which show that MoSix films can become homogeneous during 10‐s anneals at temperatures as low as 600 °C.