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Journal of Vacuum Science & Technology B / Volume 9 / Issue 3

J. Vac. Sci. Technol. B 9, 1559 (1991); http://dx.doi.org/10.1116/1.585423 (3 pages)

High resolution atomic force microscopy potentiometry

J. M. R. Weaver and David W. Abraham

IBM Research, T. J. Watson Research Center, Yorktown Heights, New York 10598

A method is presented for performing attractive‐mode force potentiometry with submillivolt accuracy and a typical spatial resolution of order 50 nm. The technique permits measurements to be made in air on specimens which may be passivated or oxidized, conducting or semiconducting, with virtually no sensitivity to oxide thickness or character. An initial demonstration is presented showing voltage measurements on a commercial operational amplifier.

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KEYWORDS and PACS

Keywords

SEMICONDUCTOR MATERIALS, SURFACES, ATOMIC FORCE MICROSCOPY

PACS

  • 68.37.-d

    Microscopy of surfaces, interfaces, and thin films

  • 41.20.Cv

    Electrostatics; Poisson and Laplace equations, boundary-value problems

  • 41.20.Gz

    Magnetostatics; magnetic shielding, magnetic induction, boundary-value problems

  • 07.50.-e

    Electrical and electronic instruments and components

  • 07.55.-w

    Magnetic instruments and components

History
Received 24 July 1990
Accepted 14 January 1991
Digital Object Identifier
http://dx.doi.org/10.1116/1.585423

PUBLICATION DATA

ISSN

0734-211X (print)  

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