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ZnxNi1-xO Mixed-Metal Oxides by XPS and Auger
Karen J. Gaskell
Surf. Sci. Spectra 14, 79 (2010); doi:10.1116/11.20071202
Mixed metal oxides present an opportunity to design new systems with unique materials characteristics through the tailoring of chemical, electronic and magnetic properties. X-ray diffraction (XRD) has shown that the solubility limit for zinc in the NiO oxide rocksalt lattice is ~30% zinc to total metal concentration, while at greater concentrations of zinc, phase separation to wurtzite is found.
ZnxNi1-xO samples with a compositional range 0 < x ≤ 0.3 were synthesized via thermal dissolution in air and their surface characterized with x-ray photoelectron spectroscopy (XPS) and Auger parameter analysis. These systems are interesting as they place zinc in an octahedral environment which is unusual for zinc normally preferring a tetrahedral environment.
Hafnium oxide thin film grown by ALD: An XPS study
Davide Barreca
Surf. Sci. Spectra 14, 34 (2009); doi:10.1116/11.20080401
One of the hottest research fields of the last decade has been the exploration of high-k dielectrics as alternatives for conventional SiO2-based gate oxides in metal-oxide-semiconductor field effect transistors. In this context, hafnium dioxide HfO2 thin films are among the leading candidates owing to their high dielectric constant (k≈25) and high density, as well as to the stability towards reaction with atmospheric CO2 and moisture and in contact with silicon. These favorable characteristics have stimulated intense research activities devoted to the synthesis of uniform HfO2 thin films with tailored properties.
In recent years, we have devoted great attention to the CVD and ALD synthesis of hafnium dioxide coatings by engineered molecular sources. As a part of a comprehensive research work devoted to the low-temperature ALD of HfO2 thin films, we present a detailed XPS analysis of the principal core levels (O 1s, Hf 4f, Hf 4d) for a representative HfO2 thin film obtained by ALD at 350 °C starting from [Hf(NEtMe)2(EtMeNC(NiPr)2)2].
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Titanium is commonly used as an implant material because of its strength, durability, density, and ability to passivated. Two titanium surfaces were compared, one produced by passivation following the ASTM F87 standard and one produced by treating coupons with piranha. The XPS spectra of the two tr ... [Surf. Sci. Spectra 15, 23 (2008)] published Tue Aug 24, 2010.
A CuO/La0.6Sr0.4Co0.2Fe0.8O3-δ supported system was obtained by depositing, by wet impregnation, 10 wt% CuO loading on the La0.6Sr0.4Co0.2Fe0.8O3-δ surface. The surface properties are investigated by means of XPS. Besides the wide scan spectrum, detailed spectra for the La 3d, Sr 3d, Co 2p, Fe 2p, ... [Surf. Sci. Spectra 15, 14 (2008)] published Tue Jul 06, 2010.
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Nanosized cerium (IV) oxide powders were synthesized using three different preparation procedures: (1) precipitation from a basic solution of cerium nitrate containing H2O2 at 273 K; (2) Marcilly method, and (3) microemulsion method. In this work the influence of the preparation procedure on the sur ... [Surf. Sci. Spectra 14, 8 (2007)] published Mon Jan 28, 2008.
ZnxNi1-xO samples with a compositional range 0 < × ≤ 0.3 were synthesized via thermal dissolution in air and their surface characterized with Auger electron spectroscopy (AES). AES analysis shows the surface composition to be comparable to the bulk composition. These systems are interesting as they ... [Surf. Sci. Spectra 14, 68 (2007)] published Fri Apr 02, 2010.
ZnxNi1-xO samples with a compositional range 0 < × ≤ 0.3 were synthesized via thermal dissolution in air and their surface characterized with x-ray photoelectron spectroscopy (XPS). XPS analysis shows the surface composition to be comparable to the bulk composition. These systems are interesting as ... [Surf. Sci. Spectra 14, 79 (2007)] published Wed May 05, 2010.
The present investigation is devoted to the X-ray photoelectron spectroscopy (XPS) analysis of the main core levels (C 1s, O 1s, Dy 4d, Dy 3d) of a representative dysprosium(III) oxide thin film. The specimen was grown on Si(100) at 500 °C by metal organic chemical vapor deposition (MOCVD) starting ... [Surf. Sci. Spectra 14, 52 (2007)] published Thu Jul 23, 2009.
