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Top 20 Most Cited Articles

The 20 most cited articles over time based on CrossRef data.


SnO2 by XPS

Michael A. Stranick and Anthony Moskwa

Surf. Sci. Spectra 2, 50 (1993); http://dx.doi.org/10.1116/1.1247724 (5 pages) | Cited 9 times

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Tin and various tin compounds have wide utility in coatings, electronics, and catalysts, as well as having numerous biological applications. Distinguishing between different tin compounds on surfaces is an important aspect of research in many of these disciplines. In this work, x‐ray photoelectron spectroscopy has been used to obtain comparison spectra of a high purity SnO2 powder. Due to rather small core level chemical shifts, it has been shown that differences in the valence band spectra provide the most direct method of distinguishing between SnO2 and SnO using XPS [see J‐M. Themlin, M. Chtaib, L. Henrard, P. Lambin, J. Darville, and J‐M. Gilles, Phys. Rev. B 46, 2460 (1992); P. M. A. Sherwood, ibid. 41, 10151 (1990); and C. L. Lau and G. K. Wertheim, J. Vac. Sci. Technol. 15, 622 (1978)]. The separation between the Sn 4d core level line and the most intense Sn valence band peak is also characteristic of Sn oxides [see J‐M. Themlin, M. Chtaib, L. Henrard, P. Lambin, J. Darville, and J‐M. Gilles, Phys. Rev. B 46, 2460 (1992) and P. M. A. Sherwood, ibid. 41, 10151 (1990)]. The valence band spectrum and the valence band–Sn 4d separation reported in this work are consistent with literature data [see J‐M. Themlin, M. Chtaib, L. Henrard, P. Lambin, J. Darville, and J‐M. Gilles, Phys., Rev. B 46, 2460 (1992); P. M. Sherwood, ibid. 41, 10151 (1990); and C. L. Lau and G. K. Wertheim, J. Vac. Sci. Technol. 15, 622 (1978)]. Auger parameter data may also prove useful for distinguishing between various tin compounds on surfaces. Thus, in addition to core level spectra, valence band and x‐ray excited Auger spectra for SnO2 are presented. Data were obtained with a Perkin‐Elmer Physical Electronics model 5600 photoelectron spectrometer using monochromatic radiation.
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79.60.-i Photoemission and photoelectron spectra
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Introduction to Studies of Aluminum and its Compounds by XPS

Peter M. A. Sherwood

Surf. Sci. Spectra 5, 1 (1998); http://dx.doi.org/10.1116/1.1247880 (3 pages) | Cited 7 times

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Aluminum is a very important element because of its many practical applications, and XPS provides an attractive method for the investigation of, and distinguishing between, aluminum and its compounds. The Al 2p core XPS spectra shows a substantial shift (about 2 eV) between the metal peak and compound peaks, and the metal peak width is much less than the width of the compound peaks. This fact has been used in numerous studies where the Al 2p spectrum can be easily curve fitted to identify a percentage area due to the metal and due to aluminum compounds. Several measurements of this kind, representing aluminum metal and 11 of its compounds, have been collected in a special issue of Surface Science Spectra. This Introduction summarizes the data to be presented and provides an overview of the use of and interpretation of XPS studies of aluminum and its compounds. © 1998 American Vacuum Society.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
73.20.At Surface states, band structure, electron density of states
01.30.Rr Surveys and tutorial papers; resource letters

Characterization of NiO by XPS

A. N. Mansour

Surf. Sci. Spectra 3, 231 (1994); http://dx.doi.org/10.1116/1.1247751 (8 pages) | Cited 7 times

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We report x‐ray photoemission spectra (XPS) of nickelous oxide (NiO). XPS spectra were measured with the Physical Electronics Model 5400 x‐ray photoelectron spectrometer using unmonochromatized Mg Kα x rays at two pass energy settings corresponding to analyzer energy resolutions of 1.34 and 0.54 eV. We present the survey spectrum (binding energy range of 0–1100 eV) measured at an analyzer energy resolution of 1.34 eV. Multiplexes of the C, O, and Ni photoemission lines, valence band region, as well as the Ni LVV Auger line were measured at an analyzer energy resolution of 0.54 eV. The research grade high purity NiO sample was obtained commercially from Atomergic Chemetals Corporation. © 1996 American Vacuum Society
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

CuO by XPS

R. P. Vasquez

Surf. Sci. Spectra 5, 262 (1998); http://dx.doi.org/10.1116/1.1247882 (5 pages) | Cited 7 times

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X-ray photoemission measurements of CuO are presented. © 1999 American Vacuum Society.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

SnO by XPS

Michael A. Stranick and Anthony Moskwa

Surf. Sci. Spectra 2, 45 (1993); http://dx.doi.org/10.1116/1.1247723 (5 pages) | Cited 7 times

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Tin and various tin compounds have wide utility in coatings, electronics, and catalysts, as well as having numerous biological applications. Distinguishing between different tin compounds on surfaces is an important aspect of research in many of these disciplines. In this work, x‐ray photoelectron spectroscopy has been used to obtain comparison spectra of a SnO powder. The SnO powder was generated by grinding ∼150 μm granules of SnO in a mortar and pestle. Grinding is necessary because surface oxidation of the SnO granules occurs producing a SnO2 shell. It has been shown that differences in the valence band spectra provide the most direct method of distinguishing between SnO2 and SnO [see J‐M. Themlin, M. Chtaib, L. Henrard, P. Lambin, J. Darville, and J‐M. Gilles, Phys. Rev. B 46, 2460 (1992); P. M. A. Sherwood, ibid. 41, 10151 (1990); and C. L. Lau and G. K. Wertheim, J. Vac. Sci. Technol. 15, 622 (1978)]. The separation between the Sn 4d core level line and the most intense Sn valence peak is also characteristic of Sn oxides [see J‐M. Themlin, M. Chtaib, L. Henrard, P. Lambin, J. Darville, and J‐M. Gilles, Phys. Rev. B 46, 2460 (1992) and P. M. A. Sherwood, ibid. 41, 10151 (1990)]. In the present study, identification of the powder as SnO after grinding was verified by comparison of the measured XPS valence band spectrum with published spectra [J‐M. Themlin, M. Chtaib, L. Henrard, P. Lambin, J. Darville, and J‐M. Gilles, Phys. Rev. B 46, 2460 (1992) and C. L. Lau and G. K. Wertheim, J. Vac. Sci. Technol. 15, 622 (1978)] and by the XPS Sn:O atomic ratio. The valence band–Sn 4d separation is also consistent with that determined for SnO [see J‐M. Themlin, M. Chtaib, L. Henrard, P. Lambin, J. Darville, and J‐M. Gilles, Phys. Rev. B 46, 2460 (1992)]. Core level, valence band and x‐ray excited Auger spectra for the SnO powder are presented. Data were obtained with a Perkin‐Elmer Physical Electronics model 5600 photoelectron spectrometer using monochromatic radiation.
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79.60.-i Photoemission and photoelectron spectra
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

TiO2 by XPS

Ulrike Diebold and T. E. Madey

Surf. Sci. Spectra 4, 227 (1996); http://dx.doi.org/10.1116/1.1247794 (5 pages) | Cited 6 times

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The surfaces of titanium oxide belong to the most-studied oxide systems in the surface science literature. This is in part because TiO2 surfaces and interfaces play a major role in several technological applications, e.g., as promoters in catalysis, as photocatalysts, and as gas sensors. TiO2 is a reducible oxide, i.e., several phases with different stoichiometries exist. Because Ti is highly reactive towards oxygen, titanium oxides are formed readily when Ti is exposed to an atmosphere containing water or oxygen. The oxidation behavior of the metal is of interest for the properties of protective coatings. Although accurate knowledge of the XPS binding energies of different oxidation states is necessary for XPS investigations of titanium oxides, a recent review of the 16 literature data of the binding energy of Ti 2p3/2 from Ti4+ showed wide scatter of the reported values with a mean of 458.7 eV and a standard deviation of 1.3 eV [J. Mayer, E. Garfunkel, T. E. Madey, and U. Diebold, J. Electron Spectrosc. Relat. Phenom. 73, 1 (1995)]. TiO2 is easy to handle experimentally. Although it has a bulk band gap of 3 eV, no charging problems occur during surface spectroscopies after single-crystalline samples are reduced by heating in UHV (1000 K, 45 min). This treatment causes loss of bulk oxygen and results in n-type doping. A stochiometric TiO2 surface can reproducibly be prepared through sputtering and annealing in oxygen (2 × 10−4 Pa, 900 K). Our XPS core level spectra are measured from a bulk-reduced titanium dioxide (rutile) (110) surface using a VSW hemispherical analyzer. The binding energy of Ti 2p3/2 is determined as 459.3 eV, and the binding energy of O 1s as 530.4 eV.© 1998 American Vacuum Society.
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73.20.At Surface states, band structure, electron density of states
79.60.Bm Clean metal, semiconductor, and insulator surfaces
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
01.30.Kj Handbooks, dictionaries, tables, and data compilations
81.65.Mq Oxidation

Zirconium Dioxide Thin Films Characterized by XPS

Davide Barreca, Giovanni A. Battiston, Rosalba Gerbasi, Eugenio Tondello, and Pierino Zanella

Surf. Sci. Spectra 7, 303 (2000); http://dx.doi.org/10.1116/1.1375573 (7 pages) | Cited 6 times

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In this work we use x-ray photoelectron spectroscopy (XPS) to analyze the principal core levels of a ZrO2 thin film deposited on glass using Zr(OPri)3(dpm) (OPri=isopropoxy; hdpm=2,2,6,6-tetramethyl-3,5-heptanedione) as precursor. Besides the general survey, charge corrected binding energies for the Zr 3d5/2, Zr 3d3/2, O 1s, and C 1s photoelectrons are reported. Deconvolution of the O 1s signal reveals the presence of –OH groups and adsorbed water, whose presence can be related to the air exposure of the film between its preparation and XPS analysis. © 2000 American Vacuum Society.
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79.60.Dp Adsorbed layers and thin films
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Characterization of LiNiO2 by XPS

A. N. Mansour

Surf. Sci. Spectra 3, 279 (1994); http://dx.doi.org/10.1116/1.1247757 (8 pages) | Cited 6 times

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We report x‐ray photoemission spectra (XPS) of lithium nickel oxide (LiNiO2). XPS spectra were measured with the Physical Electronics Model 5400 x‐ray photoelectron spectrometer using unmonochromatized Mg Kα x rays at two pass energy settings corresponding to analyzer energy resolutions of 1.34 and 0.54 eV. We present the survey spectrum (binding energy range of 0–1100 eV) measured at an analyzer energy resolution of 1.34 eV. Multiplexes of the Li, C, O, and Ni photoemission lines, valence band region, as well as Ni LVV Auger lines were measured at an analyzer energy resolution of 0.54 eV. Our results indicate that the near surface region is highly contaminated with Li2CO3 in agreement with earlier work which showed that even samples of LiNiO2 scraped in vacuum are highly contaminated with Li2CO3 but to a lesser degree. Despite the high degree of contamination, curve fitting analysis was successful in resolving the Li, Ni, and O contributions corresponding to LiNiO2. © 1996 American Vacuum Society
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Cu2O by XPS

R. P. Vasquez

Surf. Sci. Spectra 5, 257 (1998); http://dx.doi.org/10.1116/1.1247881 (5 pages) | Cited 5 times

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X-ray photoemission measurements of Cu2O are presented. © 1999 American Vacuum Society.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

X-ray Photoelectron Spectroscopy Studies of Oxidized and Reduced CeO2(111) Surfaces

Mark Engelhard, Samina Azad, C.H.F. Peden, and S. Thevuthasan

Surf. Sci. Spectra 11, 73 (2004); http://dx.doi.org/10.1116/11.20050201 (9 pages) | Cited 5 times

Online Publication Date: 28 November 2005

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We have studied the electronic structure of oxidized and reduced CeO2(111) surfaces using x-ray photoelectron spectroscopy (XPS). The 50 nm thick CeO2(111) film was grown on a YSZ(111) substrate using oxygen plasma assisted molecular beam epitaxy (OPA-MBE). This film has been characterized using in situ (RHEED) reflection high energy electron diffraction and ex situ x-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM), and Rutherford backscattering spectroscopy (RBS). The lattice mismatch between CeO2(111) and YSZ(111) is less than 5% and yields a flat surface that is comprised of an equivalent number of Ce4+ and O2− ions. Oxidation with O2 at 773 K under UHV conditions was sufficient to fully oxidize the CeO2(111). Surface reduction was carried out by annealing in UHV at 973 K. Ceria is a technologically important metal oxide with many interesting catalytic properties. The most common use of ceria is in the treatement of automobile exhaust gases, primarily due to its oxygen strorage capacity (OSC), which allows reduction of NO as well as oxidation of CO in the catalytic converter. In a reducing atmosphere cerium ions shift from Ce4+ to Ce3+ whereas under oxidizing conditions they shift from Ce3+ to Ce4+, and the charge compensation is facilitated by oxygen vacancies that are produced on the reduced surface. In this study we have have used x-ray photoelectron spectroscopy (XPS) to investigate the electronic states of in situ oxidized and reduced CeO2(111). © 2005 American Vacuum Society.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
81.65.Mq Oxidation
68.37.Lp Transmission electron microscopy (TEM)
68.49.Sf Ion scattering from surfaces (charge transfer, sputtering, SIMS)
81.40.Gh Other heat and thermomechanical treatments
82.45.Jn Surface structure, reactivity and catalysis
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
61.72.J- Point defects and defect clusters
73.20.-r Electron states at surfaces and interfaces

A Mineral TiO2(001) Anatase Crystal Examined by XPS

Geert Silversmit, Geert De Doncker, and Roger De Gryse

Surf. Sci. Spectra 9, 21 (2002); http://dx.doi.org/10.1116/11.20020701 (9 pages) | Cited 5 times

Online Publication Date: 22 May 2003

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X-ray photoelectron spectroscopy measurements with Al Kα radiation of the Ti 2p, Ti 3p, O 1s, and O 2s core levels of a mineral anatase TiO2(001) crystal are presented. The weak Ti 3p and O 2s photopeaks were measured with two resolutions. The valence band is also presented. © 2003 American Vacuum Society.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
91.30.Bi Seismic sources (mechanisms, magnitude, moment frequency spectrum)

MnO2 by XPS

Michael A. Stranick

Surf. Sci. Spectra 6, 31 (1999); http://dx.doi.org/10.1116/1.1247888 (8 pages) | Cited 5 times

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Manganese compounds have many applications in areas such as catalysis, electrochemistry, and metallurgy, among others. Distinguishing between the various chemical states of manganese is an important aspect of research in many of these areas. It has been shown that the different chemical states of manganese can be identified with XPS through the Mn 2p3/2 peak positions, Mn 2p1/2 satellite–Mn 2p1/2 peak separations, Mn 3s multiplet splittings, or Mn Auger parameters. To date, however, all of these values have not been available in a single reference. In this study, XPS has been used to obtain core level, Auger, and valence band spectra for a commercial, high purity MnO2 powder. This submission provides a reference that contains all of the Mn XPS data necessary for the identification of MnO2 and also provides information that may be useful for the analysis of other Mn compounds. © 1999 American Vacuum Society.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
71.20.Ps Other inorganic compounds

Ru and RuO2 Thin Films by XPS

Yukinao Kaga, Yoshio Abe, Hideto Yanagisawa, Midori Kawamura, and Katsutaka Sasaki

Surf. Sci. Spectra 6, 68 (1999); http://dx.doi.org/10.1116/1.1247890 (7 pages) | Cited 5 times

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Ru and RuO2 thin films are considered to be new electrode materials for dynamic random access memories (DRAMs) and ferroelectric nonvolatile memories because of their low resistivity and good thermal and chemical stabilities. In this study these thin films were pepared by reactively sputtering a Ru metal target (99.9% purity) in an argon and oxygen atmosphere. XPS spectra were collected with a PHI 1600 spectrometer equipped with a monochromatic Al Kα x-ray source and a multichannel detector. This report includes XPS spectra of Ru 3d and O 1s core regions for these samples. The binding energy of Ru 3d5/2 is determined as 280.0 and 280.8 eV for Ru and RuO2 films, respectively. The presence of a small amount of Ru with higher oxidation states, such as Ru6+ and Ru8+, is shown at the surface of the RuO2 thin film. © 1999 American Vacuum Society.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
79.60.Dp Adsorbed layers and thin films
81.05.Bx Metals, semimetals, and alloys
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)

Mn2O3 by XPS

Michael A. Stranick

Surf. Sci. Spectra 6, 39 (1999); http://dx.doi.org/10.1116/1.1247889 (8 pages) | Cited 5 times

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Manganese compounds have many applications in areas such as catalysis, electrochemistry, and metallurgy, among others. Distinguishing between the various chemical states of manganese is an important aspect of research in many of these areas. It has been shown that the different chemical states of manganese can be identified with XPS through the Mn 2p3/2 peak positions, Mn 2p1/2 satellite–Mn 2p1/2 peak separations, Mn 3s multiplet splittings, or Mn Auger parameters. To date, however, all of these values have not been available in a single reference. In this study, XPS has been used to obtain core level, Auger, and valence band spectra for a commercial, high purity Mn2O3 powder. This submission provides a reference that contains all of the Mn XPS data necessary for the identification of Mn2O3 and also provides information that may be useful for the analysis of other Mn compounds. © 1999 American Vacuum Society.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
71.20.Ps Other inorganic compounds

Corrundum (α-Al2O3) by XPS

John A. Rotole and Peter M. A. Sherwood

Surf. Sci. Spectra 5, 11 (1998); http://dx.doi.org/10.1116/1.1247851 (7 pages) | Cited 5 times

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The XPS spectra of corrundum were collected with a VSW HA150 using monochromatic Al Kα x-radiation. Monochromatic radiation provides a distinct clarity to the peak structure in the valence band of corrundrum due to the absence of interfering x-ray satellites from the intense O 2s region. Variations in the intensities and peak separation of the two-peak structure in the valence bands of the oxides, hydroxides, and oxyhydroxides of aluminum allow one to distinguish between these compounds. The valence band, survey, and the Al 2s, Al 2p, O 1s, and C 1s core levels are reported. © 1998 American Vacuum Society.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
73.20.At Surface states, band structure, electron density of states

Characterization of Electrochemically Prepared γ‐NiOOH by XPS

A. N. Mansour and C. A. Melendres

Surf. Sci. Spectra 3, 271 (1994); http://dx.doi.org/10.1116/1.1247756 (8 pages) | Cited 4 times

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We report x‐ray photoemission spectra (XPS) of electrochemically prepared γ‐NiOOH. XPS spectra were measured with the Physical Electronics Model 5400 x‐ray photoelectron spectrometer using unmonochromatized Mg Kα x rays at two pass energy settings corresponding to analyzer energy resolutions of 1.34 and 0.54 eV. We present the survey spectrum (binding energy range of 0–1100 eV) measured at an analyzer energy resolution of 1.34 eV. Multiplexes of the C, O, K, and Ni photoemission lines, valence band region, as well as Ni LMM Auger line were measured at an analyzer energy resolution of 0.54 eV. The γ–NiOOH sample was prepared by the anodic oxidation of anodically formed α‐Ni(OH)2. © 1996 American Vacuum Society
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79.60.Dp Adsorbed layers and thin films
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
82.45.-h Electrochemistry and electrophoresis

Analysis of a Zirconium Diboride Single Crystal, ZrB2 (0001), by XPS

R. Singh, M. Trenary, and Y. Paderno

Surf. Sci. Spectra 7, 310 (2000); http://dx.doi.org/10.1116/1.1376317 (6 pages) | Cited 4 times

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X-ray photoelectron spectroscopy (XPS) was used to study the clean surface of ZrB2 (0001). The clean surface exhibits Zr 3d5/2 and Zr 3d3/2 peaks at 179.2 and 181.6 eV, respectively. However, angle resolved XPS indicated ZrO2 peaks at 183.5 and 185.7 eV at higher emission angles, indicating that further cleaning was necessary. After additional cleaning cycles, these oxide peaks were no longer observed at high emission angles. This result demonstrates the necessity to probe the near surface region with higher emission angles on very reactive surfaces, in order to completely establish the cleanliness of the surface. © 2000 American Vacuum Society.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)

Analysis of Poly(amino acids) by Static Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS)

Newton T. Samuel, M. S. Wagner, K. D. Dornfeld, and David G. Castner

Surf. Sci. Spectra 8, 163 (2001); http://dx.doi.org/10.1116/11.20020301 (22 pages) | Cited 4 times

Online Publication Date: 9 December 2002

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This study presents the static time-of-flight secondary ion mass spectrometry (TOF-SIMS) spectra of 15 poly(amino acids), solvent or spin cast onto either mica or silicon substrates. These poly(amino acid) spectra are useful for interpreting the complex static TOF-SIMS spectra obtained from adsorbed protein films and peptide-functionalized surfaces. Previous studies have reported poly(amino acid) spectra acquired with a quadrupole SIMS instrument. The spectra obtained with a TOF-SIMS instrument in this study have significantly higher sensitivity and mass resolution, which are essential for producing good, high-quality reference spectra. © 2001 American Vacuum Society.
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82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
87.14.E- Proteins
82.35.Pq Biopolymers, biopolymerization

Comparison of Ti 2p Core-Level Peaks from TiO2, Ti2O3, and Ti Metal, by XPS

Richard L. Kurtz and V. E. Henrich

Surf. Sci. Spectra 5, 179 (1998); http://dx.doi.org/10.1116/1.1247874 (3 pages) | Cited 4 times

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These spectra compare the Ti 2p core-level XPS line shape for atomically clean, stoichiometric samples of Ti, Ti2O3, and TiO2; the latter two are UHV-cleaved or fractured single crystals. The Ti0 and Ti4+ peaks of Ti metal and TiO2, respectively, exhibit the simple shapes expected for such core levels. The Ti3+ peaks of Ti2O3, however, are more complex, although there are no other valence states of Ti in the sample. © 1998 American Vacuum Society.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
73.20.At Surface states, band structure, electron density of states

InAs(110) by XPS

D. M. Poirier and J. H. Weaver

Surf. Sci. Spectra 2, 224 (1993); http://dx.doi.org/10.1116/1.1247703 (8 pages) | Cited 4 times

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XPS spectra were recorded for the InAs(110) surface. For comparison, data were acquired for a sample cleaved in situ (Accession ♯00107) and for a sample exposed to air for 60 min (Accession ♯00108). The electronic record includes the In 4d, As 3d, In 3d, As LNN, In MNN, and the valence band region.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
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