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Dec 1992

Volume 1, Issue 4, pp. 329-397


Polycrystalline Diamond Film on Si(100) by XPS

Steven J. Schmieg and David N. Belton

Surf. Sci. Spectra 1, 329 (1992); http://dx.doi.org/10.1116/1.1247661 (4 pages)

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Filament‐assisted chemical vapor deposition (CVD) diamond film growth on Si(100) was studied using x‐ray photoelectron spectroscopy (XPS) in a system that couples a growth chamber to an ultrahigh vacuum analytical chamber. Diamond nucleates and grows on a SiC layer formed on the Si(100) substrate [D. N. Belton and S. J. Schmieg, Appl. Phys. Lett. 54, 416 (1989)]. After about 17 h growth XPS showed no Si signal from the substrate, no detectable contaminants, and only carbon present in survey scans. Electron energy loss spectroscopy (EELS) spectra obtained by x‐ray excitation of the C 1s level can be used as a fingerprint for distinguishing diamond from graphite or carbides [D. N. Belton and S. J. Schmieg, J. Vac. Sci. Technol. A 8, 2353 (1990)]. The identification of a continuous diamond film was confirmed with Raman spectroscopy and scanning electron microscopy (SEM).
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.35.B- Structure of clean surfaces (and surface reconstruction)
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Highly Oriented Pyrolytic Graphite by XPS

Steven J. Schmieg and David N. Belton

Surf. Sci. Spectra 1, 333 (1992); http://dx.doi.org/10.1116/1.1247662 (4 pages)

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X‐ray photoelectron spectroscopy (XPS) was used to characterize a highly oriented pyrolytic graphite (HOPG) sample. The HOPG was cleaved using scotch tape prior to introduction into an ultrahigh vacuum analytical chamber. No further cleaning was used as no elements other than carbon were detected in XPS survey scans. Electron energy loss spectroscopy (EELS) spectra obtained by x‐ray excitation of the C 1s level can be used as a fingerprint for distinguishing graphite from diamond or carbides [see D. N. Belton and S. J. Schiemg, J. Vac. Technol. A 8, 2353 (1990)].
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79.60.-i Photoemission and photoelectron spectra
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Nickel(100) by XPS

Steven J. Schmieg and David N. Belton

Surf. Sci. Spectra 1, 337 (1992); http://dx.doi.org/10.1116/1.1247663 (4 pages)

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X‐ray photoelectron spectroscopy (XPS) and low energy electron diffraction (LEED) were used to characterize a clean and highly‐oriented Ni(100) single crystal. The Ni(100) crystal was cleaned and ordered with a combination of Ar‐ion bombardment and annealing. There were no contaminants observed in XPS. The XPS binding energies were referenced to the Fermi edge of the clean nickel crystal.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

Poly (methyl methacrylate) by XPS

J. F. Moulder, W. F. Stickle, and P. E. Sobol

Surf. Sci. Spectra 1, 341 (1992); http://dx.doi.org/10.1116/1.1247664 (5 pages)

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XPS measurements are presented for poly (methyl methacrylate). The data include the valence band region and the principal core levels.
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79.60.Jv Interfaces; heterostructures; nanostructures
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Poly (ethyl methacrylate) by XPS

J. F. Moulder, W. F. Stickle, and P. E. Sobol

Surf. Sci. Spectra 1, 346 (1992); http://dx.doi.org/10.1116/1.1247665 (5 pages)

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XPS measurements for poly (ethyl methacrylate). The data include the valence band region and the principal core levels.
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79.60.Jv Interfaces; heterostructures; nanostructures
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Poly (n‐butyl methacrylate) by XPS

J. F. Moulder, W. F. Stickle, and P. E. Sobol

Surf. Sci. Spectra 1, 351 (1992); http://dx.doi.org/10.1116/1.1247666 (5 pages)

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XPS measurements are presented for high purity poly (n‐butyl methacrylate). The data include the valence band region and the principal core levels.
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79.60.Jv Interfaces; heterostructures; nanostructures
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Poly (iso‐butyl methacrylate) by XPS

J. F. Moulder, W. F. Stickle, and P. E. Sobol

Surf. Sci. Spectra 1, 356 (1992); http://dx.doi.org/10.1116/1.1247632 (5 pages)

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XPS measurements are presented for high purity poly (iso‐butyl methacrylate). The data include the valence band region and the principal core levels.
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79.60.Jv Interfaces; heterostructures; nanostructures
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

LaAlO3(100) by XPS

Richard P. Vasquez

Surf. Sci. Spectra 1, 361 (1992); http://dx.doi.org/10.1116/1.1247633 (6 pages) | Cited 2 times

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XPS core level and valence band measurements are presented for a twinned LaAlO3(100) crystal.
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81.65.-b Surface treatments
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Ultrahigh Purity Graphite Electrode by Core Level and Valence Band XPS

Yaoming Xie and Peter M. A. Sherwood

Surf. Sci. Spectra 1, 367 (1992); http://dx.doi.org/10.1116/1.1247634 (6 pages)

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Both core level and valence band XPS spectra were obtained from an ultrahigh purity (UHP) graphite electrode surface. This UHP graphite had a very low oxygen content and an extremely low nitrogen content on its surface. It had a very graphitic structure in both the surface and the bulk as evidenced by XPS and XRD studies. [See Y. Xie and P. M. A. Sherwood, Appl. Spectrosc. 43, 1153 (1989); Chem. Mater. 1, 427 (1989); 2, 293 (1990); Appl. Spectrosc. 44, 797 (1990); Chem. Mater. 3, 164 (1991); Appl. Spectrosc. 44, 1621 (1990); 45, 1158 (1991); Y. Xie, T. Wang, O. Franklin, and P. M. A. Sherwood, ibid. 46, 645 (1992).] Our previously reported work [Y. Xie and P. M. A. Sherwood, Chem. Mater. 1, 427 (1989); 2, 293 (1990); Appl. Spectrosc. 44, 797 (1990); Chem. Mater. 3, 164 (1991); Appl. Spectrosc. 44, 1621 (1990); 45, 1158 (1991); Y. Xie, T. Wang, O. Franklin, and P. M. A. Sherwood, 46, 645 (1992)] showed that XPS valence band spectra were more sensitive to the surface chemical environment than core level spectra, and could be well interpreted by X–α calculations with model compounds. In this work, the valence band spectrum shows that there were two different types of oxygen species on the UHP graphite surface. In separate data records published in Surface Science Spectra, however [see Y. Xie, T. Wang, M. A. Rooke, and P. M. A. Sherwood, Surf. Sci. Spectra 2, 192 (1992)], the valence band spectra showed that only one of the two different oxygen species could be seen on the highly oriented pyrolytic graphite (HOPG) surface, and the other of the two different oxygen species could be seen on the Du Pont E‐120 high modulus pitch‐based carbon fiber surface. No nitrogen was detected on either the HOPG or the E‐120 carbon fiber surface.
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79.60.-i Photoemission and photoelectron spectra
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Clean, As‐terminated n‐type GaAs by XPS

S. A. Chambers and V. A. Loebs

Surf. Sci. Spectra 1, 373 (1992); http://dx.doi.org/10.1116/1.1247635 (3 pages)

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Specimens were prepared by growing a 1 μm thick n‐type (4 × 1017 / cm3 Si) GaAs buffer layer on GaAs(001) in a Varian Gen‐II MBE chamber, followed by As capping with As4 for transfer through the air. After entry into the preparation chamber associated with the XPS system, the As cap was desorbed by annealing for 5 min at 45 °C in ultrahigh vacuum. The resulting surfaces were As terminated and free of contaminants, as judged by XPS, and exhibited a clear, sharp c(2 × 8)/(2 × 4) LEED pattern.
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81.65.-b Surface treatments
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Argon Implanted into Graphite, by XPS

B. Vincent Crist

Surf. Sci. Spectra 1, 376 (1992); http://dx.doi.org/10.1116/1.1247636 (5 pages)

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Argon ions (Ar+) were implanted into a substrate of natural graphite (crystal) by 4 kV acceleration for a period of 5 min using a VG EX05 ion gun. (The surface plane of the substrate was perpendicular to the flight path of the argon ions.) No attempt was made to maximize the argon concentration within the graphite. The resulting concentration of argon within the graphite surface was approximately 4.0 at. %. The BE for Ar 2p3 is 241.7 eV which is similar to the 241.9 eV obtained by Perkin Elmer [see J. F. Moulder, W. F. Stickle, P. E. Sobol, and K. O. Bomben, Handbook of X‐ray Photoelectron Spectroscopy, 2nd ed. (Perkin‐Elmer Corporation, Eden Prairie, MN, 1992), p. 65].
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79.60.-i Photoemission and photoelectron spectra
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
61.72.up Other materials

Orthorhombic YBa2Cu3O7 Cleaved Single Crystal by XPS

D. E. Fowler and D. C. Miller

Surf. Sci. Spectra 1, 381 (1992); http://dx.doi.org/10.1116/1.1247637 (12 pages)

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X‐ray photoemission spectra from the cleaved surface of a single crystal of the high temperature superconductor, YBa2Cu3O7, are presented. All spectra were taken with the sample at room temperature. The spectra of this material are dependent on which cleavage planes are exposed following crystal fracture. Extremes in the spectra are given from the continuum of observed surfaces. These extremes are obtained from cleaves leaving large macroscopic terrace planes (larger than probe size), and from cleaves leaving highly stepped surfaces with microscopic terraces (smaller than the probe size). A distinct Fermi edge is observed in the valence band. The freshly cleaved surface is free from contamination, but the spectral line shape of O 1s changes with time. This may be related to the formation of contamination compounds and/or a chemical bonding instability at the cleaved surface of the superconductor.
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79.60.-i Photoemission and photoelectron spectra
74.70.-b Superconducting materials other than cuprates

Single Crystal CuInSe2 Analysis by High Resolution XPS

P. E. Sobol, A. J. Nelson, C. R. Schwerdtfeger, W. F. Stickle, and J. F. Moulder

Surf. Sci. Spectra 1, 393 (1992); http://dx.doi.org/10.1116/1.1247638 (5 pages) | Cited 2 times

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Copper indium selenide (CIS) is a material commonly used in photovoltaic devices. High resolution XPS spectra are obtained from a freshly fractured single crystal CIS sample. Spectra include Cu 2p, In 3d and Se 3d core lines along with valence band and survey spectra.
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81.65.-b Surface treatments
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
42.70.-a Optical materials
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