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Dec 2003

Volume 10, Issue 1, pp. 1-194

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Characterization of AU/TIO2 Nanocomposites by XPS

Lidia Armelao, Davide Barreca, Gregorio Bottaro, Antonia Bovo, Alberto Gasparotto, and Eugenio Tondello

Surf. Sci. Spectra 10, 1 (2003); http://dx.doi.org/10.1116/11.20030901 (7 pages) | Cited 2 times

Online Publication Date: 24 May 2004

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Au/TiO2 nanocomposites were prepared by a hybrid route consisting in the rf sputtering of gold on porous titania xerogels [TiOx(OH)y(OR)z] obtained by means of the sol-gel route. In particular, titania substrates were prepared on silica slides by dip-coating starting from ethanolic solutions of Ti(OPri)4 (OPri=iso-propoxy) and Hacac (2,4-pentanedione). Subsequently, Au depositions were performed on the as-prepared xerogels in Ar plasmas at temperatures as low as 60 °C. The resulting systems were finally annealed in air for 1 h at 200, 400, and 600 °C, with the aim of tailoring gold distribution in the titania matrix. Their structure, composition and morphology were studied by glancing incidence x-ray diffraction (GIXRD), optical absorption spectroscopy, and x-ray photoelectron spectroscopy (XPS). This work is dedicated to the XPS characterization of a representative Au/TiO2 sample analyzed after annealing in air at 600 °C. In particular, detailed scans for the Au 4f, Ti 2p, O ls, and C 1s regions and related data are presented and discussed. The obtained results point to the presence of metallic gold and TiO2, with carbon contamination limited only to the outermost layers. © 2004 American Vacuum Society.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
82.70.Gg Gels and sols

Chemical State of Semiconducting SmS Thin Film by XPS Measurement

Yukimasa Mori and Sakae Tanemura

Surf. Sci. Spectra 10, 8 (2003); http://dx.doi.org/10.1116/11.20031101 (6 pages)

Online Publication Date: 13 July 2004

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Semiconducting SmS thin film was fabricated on a-SiO2/Si substrate at room temperature by dual targets (dc for metal Sm and rf for pressed powdered chalcogenide Sm2S3) magnetron sputtering of concurrent power control. X-ray photoelectron spectroscopy was applied to investigate the chemical state of semiconducting SmS phase. © 2004 American Vacuum Society.
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82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
79.60.Dp Adsorbed layers and thin films

Epitaxial α-Be3N3 Films Analyzed In Situ by AES, XPS, and EELS

Wencel De La Cruz Hernández, Jesus Díaz Hernández, and Gerardo Soto

Surf. Sci. Spectra 10, 14 (2003); http://dx.doi.org/10.1116/11.20031102 (7 pages)

Online Publication Date: 16 August 2004

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In situ Auger electron, x-ray photoelectron, and electron energy loss spectroscopic data were obtained on epitaxial α-Be3N2 layers grown on (111) and (100) silicon substrates. Films were grown by laser ablating a beryllium foil in molecular nitrogen ambient at 750 °C. The ultrahigh vacuum laser ablation growth system is attached to an analysis chamber equipped with an e-gun, an x-ray source (dual anode Mn/Al), and an electron analyzer MAC-3, all from CAMECA. The spectra show that the film surface is free of impurities, except for traces, of oxygen. Quantitative XPS analysis for the film yields 61, 35, and 4 at % for beryllium, nitrogen, and oxygen concentrations, respectively. © 2004 American Vacuum Society.
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79.60.Dp Adsorbed layers and thin films
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
79.20.Uv Electron energy loss spectroscopy

Au/SiO2 Nanosystems by XPS

Davide Barreca, Antonia Bovo, Alberto Gasparotto, and Eugenio Tondello

Surf. Sci. Spectra 10, 21 (2003); http://dx.doi.org/10.1116/11.20040101 (11 pages)

Online Publication Date: 18 October 2004

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Au/SiO2 nanocomposites were prepared by rf-sputtering of gold on amorphous silica substrates. Deposition experiments were carried out in Ar plasmas at temperatures as low as 60 °C. Particular attention was devoted to the combined influence of the applied rf power and total pressure on the chemico-physical properties of the final nanosystems. In particular, low pressures (<0.2 mbar) and high rf powers (>20 W) resulted in a higher sputtering yield, allowing the deposition of continuous gold films on silica. Conversely, decreased sputtering yields (at higher pressures and lower powers) enabled the preparation of discontinuous Au/SiO2 nanosystems. A thorough investigation of the structure-properties relationships was attained by means of a multi-technique characterization. In particular, laser reflection interferometry (LRI) was employed for an insitu monitoring of growth processes, while glancing-incidence x-ray diffraction (GIXRD) and transmission electron microscopy (TEM) provided valuable information on the system nanostructure. Moreover, x-ray photoelectron spectroscopy (XPS), UV-Vis spectroscopy, and atomic force microscopy (AFM) were used to investigate the chemical composition, optical properties, and surface morphology, respectively. This study is dedicated to an XPS investigation of the principal core levels (Au, Si, O) of Au/SiO2 nanosystems. In particular, detailed scans for the Au 4f, Si 2s, O 1s, and C 1s regions and related data for a gold film on silica and a discontinuous Au/SiO2 specimen are presented and discussed. © 2004 American Vacuum Society.
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81.07.-b Nanoscale materials and structures: fabrication and characterization
82.50.Kx Processes caused by X-rays or γ-rays
82.50.Hp Processes caused by visible and UV light

ZrO2-CeO2 Sol-Gel Thin Films by XPS

Lidia Armelao, Gregorio Bottaro, Laura Bigliani, and Eugenio Tondello

Surf. Sci. Spectra 10, 32 (2003); http://dx.doi.org/10.1116/11.20040102 (8 pages)

Online Publication Date: 18 October 2004

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ZrO2-CeO2 thin films were prepared by dip-coating on silica glass via sol-gel processing. Ethanolic sols of zirconium butoxide and cerium (IV) dipivaloylmethanate were used as precursors. Zr0.8Ce0.2O2 films were prepared in air and resulted transparent, homogeneous, crack-free, and well adherent to the substrates. The composition of the films and their behavior toward crystallization were studied by x-ray photoelectron spectroscopy and x-ray diffraction as a function of the annealing temperature. At 600 °C only ZrO2 resulted crystallized with tetragonal structure, whereas mixed and nanostructured cerium zirconium oxide layers were obtained at 900 °C with a mean crystallite diameter of ∼ 10 nm. © 2004 American Vacuum Society.
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81.05.Pj Glass-based composites, vitroceramics
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Boron and Phosphorus Quantification in Sol-Gel BPSG Glasses by XPS

Lidia Armelao, Davide Barreca, Gregorio Bottaro, Carmen Canevali, Franca Morazzoni, Roberto Scotti, and Eugenio Tondello

Surf. Sci. Spectra 10, 40 (2003); http://dx.doi.org/10.1116/11.20040302 (7 pages)

Online Publication Date: 18 October 2004

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Monolithic borophosphosilicate glasses (BPSG) were prepared by the sol-gel route through xerogel densification. Tetramethoxysilane (Si(OCH3)4), trimethylborate (B(OCH3)3), and trimethylphosphite (P(OCH3)3) were used as source compounds for Si, B, and P, respectively. After gel drying, samples underwent thermal treatment up to 700 °C, resulting in transparent and crack-free monolithic glasses. In this work, x-ray photoelectron spectra of a representative glass specimen are presented and discussed. Beside the wide scan spectrum, a detailed analysis of Si 2p, O ls, P 2p, B 1s + P 2s is performed. Moreover, a quantification procedure aimed at resolving problems arising from the overlap between B 1s and P 2s photopeaks in oxide-based systems is proposed. © 2004 American Vacuum Society.
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83.80.Jx Reacting systems: thermosetting polymers, chemorheology, rheokinetics
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

A Comparison of Plasma Enhanced Chemical Vapor Deposited and Thermally Deposited Hafnium Oxide and Hafnium Silicate Thin Film Using XPS

Harish B. Bhandari and Tonya M. Klein

Surf. Sci. Spectra 10, 182 (2003); http://dx.doi.org/10.1116/11.20040301 (13 pages)

Online Publication Date: 16 March 2005

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Hafnium oxide and hafnium silicate films, 20 to 55 nm thick, were grown by chemical vapor deposition using hafnium(IV) tert-butoxide, O2 and 2% SiH4 in He on a 0.005–0.03 Ω cm, n-type Si<100> substrate doped with antimony. HfO2 films were deposited thermally at a substrate temperature of 425 °C, while hafnium silicate films were deposited both thermally and using remote plasma enhanced process, at the same substrate temperature. X-ray photoelectron spectroscopy survey spectra with 100 eV pass energy and high-resolution spectra for Hf 4f, Si 2p, O ls, and C 1s core level transitions with 25 eV pass energy were obtained at 90° take off. The relative binding energies of these transitions corresponded to hafnium oxide and hafnium silicate chemical states. These spectra are useful for understanding the peak positions of hafnium, silicon and oxygen plasma enhanced chemical vapor deposited films. © 2005 American Vacuum Society.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
79.60.Dp Adsorbed layers and thin films
61.05.cp X-ray diffraction
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