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Oct 2000

Volume 7, Issue 4, pp. 281-361


Analysis of Cerium–Zirconium Mixed Metal Oxides by Auger Electron Spectroscopy

A. E. Nelson and Kirk H. Schulz

Surf. Sci. Spectra 7, 281 (2000); http://dx.doi.org/10.1116/1.1376198 (16 pages)

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Auger electron spectra of cerium–zirconium mixed metal oxides over a kinetic energy range of 50–1200 eV are presented. The cerium–zirconium metal oxides were prepared via co-precipitation of nitrate precursors. The precipitate compositions were confirmed to ± 5 at. % with x-ray fluorescence and the crystalline structures were determined with x-ray diffraction. The precipitates were formed into 0.1 mm thick specimens and analyzed in wafer form. © 2000 American Vacuum Society.
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82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.10.Dn Growth from solutions
81.10.Fq Growth from melts; zone melting and refining
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Study of Cerium Dioxide Thin Films by X-ray Photoelectron Spectroscopy

Davide Barreca, Giovanni A. Battiston, Rosalba Gerbasi, and Eugenio Tondello

Surf. Sci. Spectra 7, 297 (2000); http://dx.doi.org/10.1116/1.1375572 (6 pages) | Cited 3 times

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X-ray photoelectron spectroscopy measurements of cerium dioxide thin films have been performed. The samples were prepared by chemical vapor deposition (CVD) using Ce(dpm)4 (Hdpm = 2,2,6,6-tetramethyl-3,5-heptanedione) as precursor on alumina and glass substrates. In this work, the spectra of the principal core levels for a CeO2 film on glass are presented. The Ce 3d photopeak has the typical structure of Ce(IV) compounds. By deconvolution of the O 1s signal, the presence of –OH groups and adsorbed water are evidenced. Sputtering treatments confirm that carbon contamination is limited to the outermost layers, while resulting hydrated species are bonded tenaciously to the oxide network. © 2000 American Vacuum Society.
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79.60.Dp Adsorbed layers and thin films
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Zirconium Dioxide Thin Films Characterized by XPS

Davide Barreca, Giovanni A. Battiston, Rosalba Gerbasi, Eugenio Tondello, and Pierino Zanella

Surf. Sci. Spectra 7, 303 (2000); http://dx.doi.org/10.1116/1.1375573 (7 pages) | Cited 6 times

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In this work we use x-ray photoelectron spectroscopy (XPS) to analyze the principal core levels of a ZrO2 thin film deposited on glass using Zr(OPri)3(dpm) (OPri=isopropoxy; hdpm=2,2,6,6-tetramethyl-3,5-heptanedione) as precursor. Besides the general survey, charge corrected binding energies for the Zr 3d5/2, Zr 3d3/2, O 1s, and C 1s photoelectrons are reported. Deconvolution of the O 1s signal reveals the presence of –OH groups and adsorbed water, whose presence can be related to the air exposure of the film between its preparation and XPS analysis. © 2000 American Vacuum Society.
Show PACS
79.60.Dp Adsorbed layers and thin films
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Analysis of a Zirconium Diboride Single Crystal, ZrB2 (0001), by XPS

R. Singh, M. Trenary, and Y. Paderno

Surf. Sci. Spectra 7, 310 (2000); http://dx.doi.org/10.1116/1.1376317 (6 pages) | Cited 4 times

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X-ray photoelectron spectroscopy (XPS) was used to study the clean surface of ZrB2 (0001). The clean surface exhibits Zr 3d5/2 and Zr 3d3/2 peaks at 179.2 and 181.6 eV, respectively. However, angle resolved XPS indicated ZrO2 peaks at 183.5 and 185.7 eV at higher emission angles, indicating that further cleaning was necessary. After additional cleaning cycles, these oxide peaks were no longer observed at high emission angles. This result demonstrates the necessity to probe the near surface region with higher emission angles on very reactive surfaces, in order to completely establish the cleanliness of the surface. © 2000 American Vacuum Society.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)

Characterization of Hafnium Diboride, HfB2 (0001), by XPS

C. L. Perkins, R. Singh, T. Tanaka, and M. Trenary

Surf. Sci. Spectra 7, 316 (2000); http://dx.doi.org/10.1116/1.1376318 (6 pages)

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X-ray photoelectron spectra of a clean, well-ordered HfB2 (0001) single crystal surface are reported. A survey spectrum covering a binding energy range of 0 to 1000 eV is shown, which reveals the presence of minor amounts of oxygen and zirconium. Spectra over narrower binding energy ranges are also shown for the Hf 4f, B 1s, and Hf 4s/O 1s regions. A comparison of the Hf 4s/O 1s region before and after oxygen exposure provides for unambiguous assignment of the overlapping O 1s and Hf 4s peaks at binding energies of 531 and 534 eV, respectively. © 2000 American Vacuum Society.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)

Characterization of Cobalt Silicide Formation by X-ray Photoelectron Spectroscopy. I. CoSi

Jin Zhao and Derrick M. Poirier

Surf. Sci. Spectra 7, 322 (2000); http://dx.doi.org/10.1116/1.1376319 (7 pages)

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X-ray photoelectron spectroscopy (XPS) has been used to characterize the chemical composition and chemical state information of silicide formation in our laboratory and many others. In this work, we report the x-ray photoelectron spectra of CoSi. XPS spectra were measured with the Physical Electronics Quantum2000 system using a monochromatic Al Kα x-ray source. A survey spectrum and multiplex spectra of Co and Si photoemission lines as well as Co Auger lines were recorded. © 2000 American Vacuum Society.
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79.60.Dp Adsorbed layers and thin films
68.55.Nq Composition and phase identification
81.05.Hd Other semiconductors
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Characterization of Cobalt Silicide Formation by X-ray Photoelectron Spectroscopy. II. CoSi2

Jin Zhao and Derrick M. Poirier

Surf. Sci. Spectra 7, 329 (2000); http://dx.doi.org/10.1116/1.1376320 (7 pages) | Cited 1 time

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X-ray photoelectron spectroscopy (XPS) has been used to characterize the chemical composition and chemical state information of silicide formation in our laboratory and many others. In the present work, we report the x-ray photoelectron spectra of CoSi2. XPS spectra were measured with the Physical Electronics Quantum2000 system using a monochromatic Al Kα x-ray source. A survey spectrum and multiplex spectra of Co and Si photoemission lines as well as Co Auger lines were recorded. © 2000 American Vacuum Society.
Show PACS
79.60.Dp Adsorbed layers and thin films
68.55.Nq Composition and phase identification
81.05.Hd Other semiconductors
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

InP (110) by Time-resolved XPS

Z. W. Deng, R. W. M. Kwok, W. M. Lau, and L. L. Cao

Surf. Sci. Spectra 7, 336 (2000); http://dx.doi.org/10.1116/1.1379510 (12 pages)

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Time-resolved binding energy (BE) changes of the In 3d5/2 level of heavily doped n-InP (100) (S-doped with a carrier density of 2.4 × 1017 cm−3) and p-InP (100) (Zn-doped with a carrier density of 3.9 × 1018 cm−3) after cleaving in UHV were measured by XPS. Also presented are spectra of survey, In 3d5/2 and P 2p levels after the BE stopped shifting. Measurements were carried out on the in situ cleaved (110) facets. The results show nearly flat band surface as cleaved in UHV. The subsequent binding energy changes reflected the Fermi level shift in the band gap relative to the valence band maximum induced by surface states which are believed to be a consequence of surface lattice relaxation after cleavage. The accurate BE of the as cleaved P 2p level can be obtained via interpolation according to the BE changes of In 3d5/2. © 2000 American Vacuum Society.
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79.60.Bm Clean metal, semiconductor, and insulator surfaces
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
71.20.Nr Semiconductor compounds

GaAs (110) by Time-resolved XPS

Z. W. Deng, R. W. M. Kwok, W. M. Lau, and L. L. Cao

Surf. Sci. Spectra 7, 348 (2000); http://dx.doi.org/10.1116/1.1379511 (14 pages)

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Time-resolved binding energy (BE) changes of the Ga 2p3/2 level of heavily doped n-GaAs (100) (Si-doped with a carrier density of 3 × 1018 cm−3) and p-GaAs (100) (Zn-doped with a carrier density of 5∼6 × 1019 cm−3) after cleaving in UHV were measured by XPS. Also presented are spectra of survey, Ga 2p3/2, Ga 3d, and As 3d levels after the BE stopped shifting. Measurements were carried out on the in situ cleaved (110) facets. The results show nearly flat band surface as cleaved in UHV. The subsequent binding energy changes reflected the Fermi level shift in band gap relative to the valence band maximum induced by surface states which are believed to be a consequence of surface lattice relaxation after cleavage. The accurate BE of as-cleaved Ga 3d and As 3d levels can be obtained via interpolation according to the BE changes of Ga 2p3/2. © 2000 American Vacuum Society.
Show PACS
79.60.Bm Clean metal, semiconductor, and insulator surfaces
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
71.20.Nr Semiconductor compounds
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