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Apr 2001

Volume 8, Issue 2, pp. 87-161


Copper Pthalocyanine by XPS

Barbara Adolphi, Olena Berger, and Wolf-Joachim Fischer

Surf. Sci. Spectra 8, 87 (2001); http://dx.doi.org/10.1116/11.20010603 (10 pages) | Cited 1 time

Online Publication Date: 11 June 2002

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Copper pthalocyanine (CuPc) is an important technological material, being used for both dyes and chemical sensors. Our interest is focused on the sensors. The thin films were deposited by a sublimation technique on polycrystalline SiO2 layers (1.65 μm) on a silicon wafer from a commercial CuPc powder. Films were deposited at a substrate temperature of 293 K and with a deposition rate of 0.3 nm/s forming an α-form with a preferential orientation in the [200] direction. After deposition the thin films were heated to investigate the α→β phase transformation in a separate chamber. X-ray diffraction analysis indicated that annealing at 300 °C for 3 h in nitrogen resulted in a complete α→β transformation. The crystals of β phase forming the film have preferential growth orientation in the [100] and [011] direction to the surface of the SiO2 layer. Surface analysis by XPS was used in order to clarify the molecular structure and chemical compositions of the thin films. The measurements from the core level peaks, as well as the valence bands, showed systematic changes resulting from the annealing procedure. © 2002 American Vacuum Society.
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79.60.Fr Polymers; organic compounds
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
68.55.Nq Composition and phase identification

Zinc Diisopropyl Dithiophosphate by XPS

Michael Eglin, Antonella Rossi, Federica M. Piras, and Nicholas D. Spencer

Surf. Sci. Spectra 8, 97 (2001); http://dx.doi.org/10.1116/11.20010901 (8 pages)

Online Publication Date: 11 June 2002

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X-ray photoelectron spectroscopy was used to characterize zinc diisopropyl dithiophosphate (ZnDTP). This compound belongs to the family of zinc dialkyldithiophosphates, which have been used since 1940 as extreme-pressure, high-temperature additives for lubricant formulations. A full XPS characterization of this compound is presented here for the first time. Zinc diisopropyl dithiophosphate is a white powder. NMR and FT-IR spectroscopies, as well as chemical analysis, have been performed and the results are in agreement with the expected chemical structure of the molecule. The substance is sensitive to x-ray irradiation. The sample was cooled by liquid nitrogen (to approximately 100 K) during the analysis and the conditions chosen such that no degradation of the substance could be observed. Quantitative XPS spectroscopy yielded a composition that coincides with the expected chemical formula. © 2002 American Vacuum Society.
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82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
82.80.Gk Analytical methods involving vibrational spectroscopy

ZnSe Thin Films Deposited by the Chemical Bath Deposition Method, by XPS

Antonio M. Chaparro and Cesar Maffiotte

Surf. Sci. Spectra 8, 105 (2001); http://dx.doi.org/10.1116/11.200110201 (12 pages)

Online Publication Date: 11 June 2002

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Surface and bulk composition of ZnSe thin films deposited by the chemical bath deposition (CBD) method, are analyzed with x-ray photoelectron spectroscopy (XPS). In-depth composition information is obtained with angle-resolved XPS (ARXPS) and sputtering-assisted XPS. The films show excess Zn proportion (Zn/Se=1.1) due to an amount of ZnO (or OH−). ARXPS and sputtering assisted measurements show that the Zn excess is higher in the layers closer to the substrate, i.e., layers deposited at the beginning of the deposition process. A deposition mechanism most active at the beginning is responsible for the competitive deposition of ZnO. Other minority components in the films are surface SeO2, from ZnSe oxidation in air, bulk atomic Se, from oxidation of ZnSe and/or selenide bath precursors, and atomic Zn on layers closer to the substrate surface, from the initial CBD reaction. © 2002 American Vacuum Society.
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79.60.Dp Adsorbed layers and thin films
81.05.Dz II-VI semiconductors
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
84.60.Jt Photoelectric conversion

Rhodium and Rhodium Oxide Thin Films Characterized by XPS

Yoshio Abe, Kiyohiko Kato, Midori Kawamura, and Katsutaka Sasaki

Surf. Sci. Spectra 8, 117 (2001); http://dx.doi.org/10.1116/11.20010801 (9 pages) | Cited 2 times

Online Publication Date: 11 June 2002

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RhO2 belongs to the family of conducting platinum group metal oxides, which have attracted attention as new capacitor electrode materials for dynamic random access memories (DRAMs) and nonvolatile ferroelectric random access memories (FeRAMs). Rh, Rh2O3, and RhO2 thin films were prepared by sputtering and their XPS spectra were collected with a monochromatic Al Kα x-ray source. This report includes XPS spectra of Rh 3d and O 1s core regions for these films. © 2002 American Vacuum Society.
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79.60.Dp Adsorbed layers and thin films
81.15.Cd Deposition by sputtering
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

Analysis of Cerium–Zirconium Mixed Metal Oxides by X-Ray Photoelectron Spectroscopy

Alan E. Nelson, Melissa K. Graves-Brook, and Kirk H. Schulz

Surf. Sci. Spectra 8, 126 (2001); http://dx.doi.org/10.1116/11.20020105 (36 pages) | Cited 1 time

Online Publication Date: 11 June 2002

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Survey and high-resolution x-ray photoelectron spectra of cerium–zirconium mixed metal oxides prepared by co-precipitation are presented. The spectra were collected using a Mg Kα (1253.6 eV) source operated at 300 W and 15 kV over a binding energy range of 1100–0 eV. The compositions of the mixed metal oxides were confirmed with x-ray fluorescence and Auger electron spectroscopy prior to XPS characterization. The precipitates were formed into 100 μm thick specimens and analyzed in wafer form. © 2002 American Vacuum Society.
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82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
79.60.Bm Clean metal, semiconductor, and insulator surfaces
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
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